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STL40DN3LLH5
Dual N-channel 30 V, 0.016 , 11 A
PowerFLATTM (5x6) double island, STripFETTM V Power MOSFET
Preliminary data
Features
Type VDSS RDSo(n) ID
STL40DN3LLH5 30 V < 0.018 11 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness PowerFLATTM (5x6)
Double island
Low gate drive power losses
Application
Switching applications
Figure 1. Internal schematic diagram
Description
This product utilizes the 5th generation of design
rules of ST's proprietary STripFETTM technology.
The lowest available RDS(on)*Qg, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1. Device summary
Order code Marking Package Packaging
PowerFLATTM(5x6)
STL40DN3LLH5 40DN3LLH5 Tape and reel
Double island
January 2011 Doc ID 18416 Rev 1 1/11
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 11
change without notice.
Contents STL40DN3LLH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuits .............................................. 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11 Doc ID 18416 Rev 1
STL40DN3LLH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage