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SEMICONDUCTOR KF5N50DS
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR

General Description

This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
A K DIM MILLIMETERS
charge and excellent avalanche characteristics. It is mainly suitable for C D L
A _
6.60 + 0.20
electronic ballast and switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
E _
2.70 + 0.15
FEATURES B
F _
2.30 + 0.10
G 0.96 MAX
VDSS= 500V, ID= 4.3A
H 0.90 MAX
H
Drain-Source ON Resistance : RDS(ON)=1.4 (Max) @VGS = 10V J J _
1.80 + 0.20
E
G N K _
2.30 + 0.10
Qg(typ) = 12nC L _
0.50 + 0.10
F F M M _
0.50 + 0.10
trr(typ) = 150nS N 0.70 MIN
O Max 0.1


1 2 3



MAXIMUM RATING (Tc=25 )
O
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V
DPAK (1)
@TC=25 4.3
ID
Drain Current @TC=100 2.7 A
Pulsed (Note1) IDP 13
Single Pulsed Avalanche Energy EAS 270 mJ
(Note 2)
Repetitive Avalanche Energy EAR 8.6 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 20 V/ns
(Note 3)
Drain Power Tc=25 59.5 W
PD
Dissipation Derate above 25 0.48 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 2.1 /W
Thermal Resistance, Junction-to-
RthJA 110 /W
Ambient


PIN CONNECTION


D




G



S




2011. 5. 23 Revision No : 0 1/6
KF5N50DS

ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.55 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 10
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.15A - 1.10 1.4
Dynamic
Total Gate Charge Qg - 12 -
VDS=400V, ID=5A
Gate-Source Charge Qgs - 2.4 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 5.4 -
Turn-on Delay time td(on) - 22.5 -
VDD=250V
Turn-on Rise time tr - 29 -
ID=5A ns
Turn-off Delay time td(off) - 58 -
RG=25 (Note4,5)
Turn-off Fall time tf - 18 -
Input Capacitance Ciss - 430 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 71 - pF
Reverse Transfer Capacitance Crss - 7.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 5
VGS Pulsed Source Current ISP - - 20
Diode Forward Voltage VSD IS=4.3A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=5A, VGS=0V, - 150 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ - 0.42 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 5A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.


Marking


1
KF5N50
DS 001 2




1 PRODUCT NAME

2 LOT NO




2011. 5. 23 Revision No : 0 2/6
KF5N50DS



Fig1. ID - VDS Fig2. ID - VGS
2
10
VDS=30V
Drain Current ID (A)




Drain Current ID (A)
1
VGS=10V 10
1
10
VGS=7V
TC=100 C
25 C
0
0 10
10 VGS=5V




-1
10 -1
10
-1 0 1 2
10 10 10 10 2 4 6 8 10

Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)




Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS




1.2 3.0
VGS = 0V
On - Resistance RDS(ON) ()




IDS = 250
2.5
1.1 VGS=6V
2.0

1.0 1.5
VGS=10V
1.0
0.9
0.5

0.8 0
-100 -50 0 50 100 150 0 2 4 6 8 10 12

Junction Temperature Tj ( C ) Drain Current ID (A)




Fig5. IS - VSD Fig6. RDS(ON) - Tj

10
2 3.0
VGS =10V
Reverse Drain Current IS (A)




IDS = 2.5A
2.5
Normalized On Resistance




10
1 2.0

TC=100 C 1.5
25 C
10
0 1.0

0.5

-1 0.0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150

Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)




2011. 5. 23 Revision No : 0 3/6
KF5N50DS



Fig 7. C - VDS Fig8. Qg- VGS
3
10 12
ID=5A




Gate - Source Voltage VGS (V)
Ciss 10
Capacitance (pF)




2
10 8
VDS = 400V

Coss VDS = 250V
6
VDS = 100V
1
10 4

Crss 2

0
10 0
0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16

Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)


Fig9. Safe Operation Area Fig10. ID - Tj

102 Operation in this 6
area is limited by RDS(ON)
5
Drain Current ID (A)




Drain Current ID (A)




101 10