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BUT100
HIGH POWER NPN SILICON TRANSISTOR
n HIGH EFFICIENCY SWITCHING
n VERY LOW SATURATION VOLTAGE
n RECTANGULAR SAFE OPERATION AREA
n WIDE ACCIDENTAL OVERLOAD AREA
DESCRIPTION
Suitable for motor drivers, SMPS converters,
uninterruptable power supply operating low
voltage supply. 1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Unit
V CEV Collector-Emitter Voltage (V BE = -1.5V) 200 V
V CEO Collector-Emitter Voltage (I B = 0) 125 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IE Emitter Current 50 A
I EM Emitter Peak Current 150 A
IB Base Current 10 A
I BM Base Peak Current 30 A
o
P tot T otal Dissipation at T c < 25 C 300 W
o
T s tg Storage Temperature -65 to 200 C
o
Tj Max. O perating Junction Temperature 200 C
October 1995 1/4
BUT100
THERMAL DATA
o
R thj -ca se Thermal Resistance Junction-case Max 0.58 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit
I CER Collector Cut-off V CE = V CEV 1 mA
Current (R BE = 5) V CE = V CEV T C= 100 o C 5 mA
I CEV Collector Cut-off V CE = V CEV V BE = -1.5V 1 mA
o
Current V CE = V CEV V BE = -1.5V TC = 100 C 4 mA
I EBO Emitter Cut- off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 0.2mA 125 V
Sustaining Voltage L = 25mH
V EBO Emitter-Base Voltage I E = 50mA 7 V
(I C = 0)
V CE(sat) Collector-Emitter IC = 50A IB = 2.5A 0.9 V
Saturation Voltage IC = 100A IB = 10A 0.9 V
IC = 50A IB = 2.5A Tj = 100 o C 1.2 V
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IC = 100A IB = 10A Tj = 100 C 1.5 V
V BE(sat ) Base-Emitter IC = 50A IB = 2.5A 1.4 V
Saturation Voltage IC = 100A IB = 10A 2 V
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IC = 50A IB = 2.5A Tj = 100 C 1.4 V
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IC = 100A IB = 10A Tj = 100 C 2.1 V
di c/dt Rate of Rise of VCC = 100V R C = 0 I B1 = 5A 180 A/