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STD25NF10
N-channel 100V - 0.033 - 25A - DPAK
Low gate charge STripFETTM II Power MOSFET

General features
Type VDSS RDS(on) ID
STD25NF10 100V < 0.038 25A

Exceptional dv/dt capability
3
Application oriented characterization 1
100% avalanche tested
Application oriented characterization DPAK


Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore Internal schematic diagram
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.

Applications
Switching application




Order codes
Part number Marking Package Packaging
STD25NF10T4 D25NF10 DPAK Tape & reel




July 2006 Rev 4 1/13
www.st.com 13
Contents STD25NF10


Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6

3 Test circuit ................................................ 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12




2/13
STD25NF10 Electrical ratings


1 Electrical ratings

Table 1. Absolute maximum ratings
Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 100 V
VDGR Drain-gate voltage (RGS = 20 k) 100 V
VGS Gate- source voltage