am83135-04.pdf part of ST am83135-04 am83135-04.pdf, . Electronic Components Datasheets Active components Transistors ST am83135-04.pdf text manual preview

Text preview for : am83135-04.pdf part of ST am83135-04 . Electronic Components Datasheets Active components Transistors ST am83135-04.pdf

Back to : am83135-04.pdf | Home

AM83135-040
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS

.
. REFRACTORY/GOLD METALLIZATION
PRELIMINARY DATA

.
.
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE

.
.
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY

. METAL/CERAMIC HERMETIC PACKAGE
POUT = 40 W MIN. WITH 5.1 dB GAIN .310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE BRANDING
AM83135-040 AM83135-40
DESCRIPTION
The AM83135-040 device is a high power silicon
bipolar NPN transistor specifically designed for S-
PIN CONNECTION
Band radar pulsed output and driver applications.
This device is characterized at 10