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2SC2235
TO-92MOD Transistor (NPN)
TO-92MOD
1 1. EMITTER 5.800
6.200
2
3 2. COLLECTER
3. BASE 8.400
8.800
Features 0.900
1.100
0.400
Complementary to 2SA965 0.600
13.800
14.200
MAXIMUM RATINGS (TA=25 unless otherwise noted) B B
Symbol Parameter Value Units 1.500 TYP
2.900
VCBO B B Collector-Base Voltage 120 V 3.100
0.000 1.600
VCEO B B Collector-Emitter Voltage 120 V 0.380
VEBO B B Emitter-Base Voltage 5 V 0.400 4.700
0.500 5.100
IC
B B Collector Current -Continuous 0.8 A
PC B B Collector Power Dissipation 0.9 W 1.730
4.000 2.030
TJ B B Junction Temperature 150 Dimensions in inches and (millimeters)
TstgB B Storage Temperature -55to+150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO
B B IC=1mA,IE=0
B B B B 120 V
Collector-emitter breakdown voltage V(BR)CEO
B B IC=10mA,IB=0
B B B B 120 V
Emitter-Base breakdown voltage V(BR)EBO B B IE=1mA,IC=0
B B B B 5 V
Collector cut-off current ICBO
B B VCB=120V,IE=0
B B B B 0.1 A
Emitter cut-off current IEBOB B VEB=5V,IC=0
B B B B 0.1 A
DC current gain hFE B B VCE=5V,IC=100mA
B B B B 80 240
Collector-emitter saturation voltage VCE(sat)
B B IC=500mA,IB=50mA
B B B B 1.0 V
Base-emitter voltage VBE B B IC=500mA, VCE=5V
B B B B 1.0 V
Transition frequency fT B B VCE=5V, IC=100mA
B B B B 120 MHz
VCE=10V, IE=0
B B B B
Collector output capacitance Cob 30 pF
f=1MHz
CLASSIFICATION OF hFE
Rank O Y
Range 80-160 120-240
2SC2235
TO-92MOD Transistor (NPN)
Typical Characteristics