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MSB1218A- RT1G
-
PNP Silicon General
Purpose Amplifier
Transistor
This PNP Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC--70/SOT--323 package which is designed for low power surface http://onsemi.com
mount applications.
Features COLLECTOR
3
High hFE, 210 -- 460
Low VCE(sat), < 0.5 V
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25C) 1 2
Rating Symbol Value Unit BASE EMITTER
Collector--Base Voltage V(BR)CBO 45 Vdc
Collector--Emitter Voltage V(BR)CEO 45 Vdc 3
Emitter--Base Voltage V(BR)EBO 7.0 Vdc 1
2
Collector Current -- Continuous IC 100 mAdc
Collector Current -- Peak IC(P) 200 mAdc SC-
-70 (SOT--323)
CASE 419
THERMAL CHARACTERISTICS
STYLE 4
Rating Symbol Max Unit
Power Dissipation (Note 1) PD 150 mW
MARKING DIAGRAM
Junction Temperature TJ 150 C
Storage Temperature Range Tstg -- 55 to +150 C
ELECTRICAL CHARACTERISTICS BR M G
G
Characteristic Symbol Min Max Unit
Collector--Emitter Breakdown Voltage V(BR)CEO 45 -- Vdc 1
(IC = 2.0 mAdc, IB = 0)
Collector--Base Breakdown Voltage V(BR)CBO 45 -- Vdc BR = Device Code
(IC = 10 mAdc, IE = 0) M = Date Code*
Emitter--Base Breakdown Voltage V(BR)EBO 7.0 -- Vdc G = Pb--Free Package
(IE = 10 mAdc, IE = 0) (Note: Microdot may be in either location)
*Date Code orientation may vary depending
Collector--Base Cutoff Current ICBO -- 0.1 mA upon manufacturing location.
(VCB = 20 Vdc, IE = 0)
Collector--Emitter Cutoff Current ICEO -- 100 mA ORDERING INFORMATION
(VCE = 10 Vdc, IB = 0)
Device Package Shipping
DC Current Gain (Note 2) hFE1 210 340 --
(VCE = 10 Vdc, IC = 2.0 mAdc) MSB1218A--RT1G SC--70 3000 /Tape & Reel
(Pb--Free)
Collector--Emitter Saturation Voltage VCE(sat) -- 0.5 Vdc
(Note 2) (IC = 100 mAdc, IB = 10 mAdc) For information on tape and reel specifications,
including part orientation and tape sizes, please
Stresses exceeding Maximum Ratings may damage the device. Maximum
refer to our Tape and Reel Packaging Specifications
Ratings are stress ratings only. Functional operation above the Recommended
Brochure, BRD8011/D.
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR--4 glass epoxy printed circuit board using the
minimum recommended footprint.
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 7
- MSB1218A- -RT1/D
MSB1218A-
-RT1G
250
PD , POWER DISSIPATION (MILLIWATTS)
TA = 25C
IC, COLLECTOR CURRENT (mA)
200 120
150 90
300 mA
250
100 60 200
150
RJA = 833C/W 100
50 30
IB = 50 mA
0 0
-- 50 0 50 100 150 0 3 6 9 12 15
TA, AMBIENT TEMPERATURE (C) VCE, COLLECTOR VOLTAGE (V)
Figure 1. Derating Curve Figure 2. IC - VCE
-
1000 2
VCE , COLLECTOR-EMITTER VOLTAGE (V)
VCE = 10 V TA = 25C
TA = 25C
TA = 75C
1.5
DC CURRENT GAIN
TA = -- 25C
100 1
0.5
10 0
0.1 1 10 100 0.01 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
Figure 3. DC Current Gain Figure 4. Collector Saturation Region
900 13
800
12
Cib, INPUT CAPACITANCE (pF)
COLLECTOR VOLTAGE (mV)
700
11
600
500 10
400 9
300
TA = 25C 8
200
VCE = 5 V
7
100
0 6
0.2 0.5 1 5 10 20 40 60 80 100 150 200 0 1 2 3 4
IC, COLLECTOR CURRENT (mA) VEB (V)
Figure 5. On Voltage Figure 6. Capacitance
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2
MSB1218A-
-RT1G
14
12
C ob, CAPACITANCE (pF)
10
8
6
4
2
0
0 10 20 30 40
VCB (V)
Figure 7. Capacitance
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3
MSB1218A-
-RT1G
PACKAGE DIMENSIONS
SC-
-70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095
STYLE 4:
c
A A2 PIN 1. CATHODE
2. CATHODE
3. ANODE
0.05 (0.002) L
A1
SOLDERING FOOTPRINT*
0.65
0.65 0.025
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1 inches
mm
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent
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http://onsemi.com MSB1218A-
-RT1/D
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