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STP90NF03L
STB90NF03L-1
N-CHANNEL 30V - 0.0056 - 90A TO-220/I2PAK
LOW GATE CHARGE STripFETTM POWER MOSFET
TYPE VDSS RDS(on) ID
STP90NF03L 30 V < 0.0065 90 A
STB90NF03L-1 30 V < 0.0065 90 A
s TYPICAL RDS(on) = 0.0056
s TYPICAL Qg = 35 nC @ 5V
s OPTIMAL R DS(on) x Qg TRADE-OFF 3 3
s CONDUCTION LOSSES REDUCED 1
2 12
s SWITCHING LOSSES REDUCED TO-220 I2PAK
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique "Single
Feature SizeTM" strip-based process. The resulting
transistor shows the best trade-off between on-re-
sistance and gate charge. When used as high and INTERNAL SCHEMATIC DIAGRAM
low side in buck regulators, it gives the best perfor-
mance in terms of both conduction and switching
losses. This is extremely important for mother-
boards where fast switching and high efficiency are
of paramount importance.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP90NF03L P90NF03L TO-220 TUBE
STB90NF03L-1 B90NF03L I2PAK TUBE
April 2003 1/9
STP90NF03L/STB90NF03L-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 k) 30 V
VGS Gate- source Voltage