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SEMICONDUCTOR KRC119S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR


SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION

FEATURES
E
With Built-in Bias Resistors. L B L
DIM MILLIMETERS
Simplify Circuit Design. A _
2.93 + 0.20
Reduce a Quantity of Parts and Manufacturing Process. B 1.30+0.20/-0.15
C 1.30 MAX




D
2 3 D 0.40+0.15/-0.05




A

G
E 2.40+0.30/-0.20




H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
EQUIVALENT CIRCUIT BIAS RESISTOR VALUES K 0.00 ~ 0.10
Q
L 0.55
TYPE NO. P P
R1(k ) R2(k ) M 0.20 MIN
OUT N 1.00+0.20/-0.10
KRC119S 4.7 10




N
C
P 7




J
Q Max 0.1.




K
M
R1
IN
R2



COMMON
SOT-23



MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage VO 50 V
Marking
Input Voltage VI 25, -7 V
Lot No.
Output Current IO 150 mA
Power Dissipation PD 200 mW Type Name
N6
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150




ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current IO(OFF) VO=50V, VI=0 - - 500 nA
DC Current Gain GI VO=5V, IO=10mA 30 - -
Output Voltage VO(ON) IO=10mA, II=0.5mA - 0.1 0.3 V
Input Voltage (ON) VI(ON) VO=0.3V, IO=20mA - 1.76 2.5 V
Input Voltage (OFF) VI(OFF) VCC=5V, IO=100 A 0.3 0.82 - V
Transition Frequency f T* VO=10V, IO=5mA - 250 - MHz
Input Current II VI=5V - - 1.8 mA
Input Resistor R1 - 3.29 4.7 6.11 k
Resistor Ratio R2/R1 - 1.7 2.1 2.6

Note : * Characteristic of Transistor Only.


2012. 8. 24 Revision No : 0 1/2
KRC119S


I O - V I(ON) I O - V I(OFF)
100 3k
50




OUTPUT CURRENT I O (