Text preview for : AO4496 - N-Channel Enhancement Mode Field Effect Transistor.pdf part of
| Home
AO4496
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
The AO4496/L uses advanced trench technology to VDS (V) = 30V
provide excellent RDS(ON) with low gate charge. This ID = 10A (VGS = 10V)
device is suitable for use as a DC-DC converter RDS(ON) < 19.5m (VGS = 10V)
application. AO4496 and AO4496L are electrically RDS(ON) < 26m (VGS = 4.5V)
identical.
UIS TESTED!
-RoHS Compliant Rg, Ciss, Coss, Crss Tested
-AO4496L is Halogen Free
D
S D
S D
S D G
G D
S
SOIC-8
Absolute Maximum Ratings TJ=25