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STP8NM60, STP8NM60FP
STD5NM60, STD5NM60-1
N-CHANNEL 600V - 0.9 - 8A TO-220/TO-220FP/DPAK/IPAK
MDmeshTM Power MOSFET
TYPE VDSS RDS(on) ID Pw
STP8NM60 600 V < 1 8A 100 W
STP8NM60FP 600 V < 1 8 A(*) 30 W
STD5NM60 600 V < 1 5A 96 W
STD5NM60-1 600 V < 1 5A 96 W 3
2
s TYPICAL RDS(on) = 0.9 TO-220
1
TO-220FP
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE
CHARGE 3 3
2
s LOW GATE INPUT RESISTANCE 1 1
DPAK IPAK
TO-252 TO-251
DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal INTERNAL SCHEMATIC DIAGRAM
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP8NM60 P8NM60 TO-220 TUBE
STP8NM60FP P8NM60FP TO-220FP TUBE
STD5NM60T4 D5NM60 DPAK TAPE & REEL
STD5NM60-1 D5NM60 IPAK TUBE
August 2003 1/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STD5NM60
STP8NM60 STP8NM60FP
STD5NM60-1
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage