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SEMICONDUCTOR PZTA42
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
A
TELEPHONE APPLICATION.
H L
2
FEATURES
Complementary to PZTA92.
K
E B
1 3
J
MAXIMUM RATING (Ta=25 )
G
CHARACTERISTIC SYMBOL RATING UNIT F F
Collector-Base Voltage VCBO 300 V
1 2 3 DIM MILLIMETERS
A _
6.5 + 0.2
Collector-Emitter Voltage VCEO 300 V C
_
B 3.5 + 0.2
C 1.8 MAX
Emitter-Base Voltage VEBO 5.0 V D D 0.7+0.15/-0.1
E _
7 + 0.3
Collector Current IC 500 mA
F 2.3 TYP
G 0.26+0.09/-0.02
Emitter Current IE -500 mA 1. BASE
H 3.0+0.15/-0.1
2. COLLECTOR (HEAT SINK) _
J 1.75 + 0.25
Collector Power Dissipation PC * 1 W 3. EMITTER K 0.1 MAX
L 10 MAX
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
SOT-223
* Package Mounted On FR-4 PCB 36 18 1.5mm. :
mountina pad for the collector lead min.6cm2
Marking
Type Name
PZTA42
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 300 - - V
Collector-Emitter Breakdown Voltage V(BE)CEO IC=1.0mA, IB=0 300 - - V
IC=1.0mA, VCE=10V 40 - -
DC Current Gain * hFE IC=10mA, VCE=10V 40 - -
IC=30mA, VCE=10V 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=20mA, IB=2.0mA - - 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=20mA, IB=2.0mA - - 0.9 V
Transition Frequency fT VCE=20V, IC=10mA, f=100MHz 50 - - MHz
Collector Output Capacitance Cob VCB=20V, IE=0, f=1MHz - - 3.0 pF
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
2004. 05. 21 Revision No : 0 1/2
PZTA42
2004. 05. 21 Revision No : 0 2/2