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STP36N05L
STP36N05LFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR

TYPE V DSS R DS( on) ID
STP36N05L 50 V < 0.04 36 A
STP36N05LFI 50 V < 0.04 21 A

s TYPICAL RDS(on) = 0.033
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
3 3
s LOW GATE CHARGE 2 2
1 1
s HIGH CURRENT CAPABILITY
s LOGIC LEVEL COMPATIBLE INPUT
o
s 175 C OPERATING TEMPERATURE TO-220 ISOWATT220
s APPLICATION ORIENTED
CHARACTERIZATION

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS INTERNAL SCHEMATIC DIAGRAM
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STP36N05L STP36N05LFI
VD S Drain-source Voltage (V GS = 0) 50 V
V DG R Drain- gate Voltage (R GS = 20 k) 50 V
V GS Gate-source Voltage