Text preview for : 2n6762_irf430.pdf part of



| Home

PD - 90336F



IRF430
REPETITIVE A ALANCHE AND dv/dt RATED
V JANTX2N6762

HEXFET TRANSISTORS JANTXV2N6762
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]
500V, N-CHANNEL

Product Summary
Part Number BVDSS RDS(on) ID
IRF430 500V 1.5 4.5A

The HEXFETtechnology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re- TO-3
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control, Features:
very fast switching, ease of paralleling and temperature n Repetitive Avalanche Ratings
stability of the electrical parameters. n Dynamic dv/dt Rating
They are well suited for applications such as switching n Hermetically Sealed
power supplies, motor controls, inverters, choppers, audio n Simple Drive Requirements
amplifiers and high energy pulse circuits. n Ease of Paralleling


Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25