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DISCRETE SEMICONDUCTORS

DATA SHEET

BFT93
PNP 5 GHz wideband transistor
Product specification November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFT93

DESCRIPTION PINNING
PNP transistor in a plastic SOT23 PIN DESCRIPTION
envelope.
Code: X1p
It is primarily intended for use in RF 1 base
wideband amplifiers, such as in aerial fpage 3
2 emitter
amplifiers, radar systems,
oscilloscopes, spectrum analyzers, 3 collector
etc. The transistor features low
intermodulation distortion and high 1 2
power gain; due to its very high
Top view MSB003
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR93 and Fig.1 SOT23.
BFR93A.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter - -15 V
VCEO collector-emitter voltage open base - -12 V
Ic DC collector current - -35 mA
Ptot total power dissipation up to Ts = 95