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2SB507(PNP)
TO-220 Transistor
TO-220
1. BASE

2. COLLECTOR

3. EMITTER

3
2
Features 1

Low Collector-Emitter Saturation Voltage
Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A
DC Current Gain hFE=40~320@IC=-1A
Complementray to NPN 2SD313

MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -3 A
PC Collector Power Dissipation 1.75 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -60 V

Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -60 V

Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V

Collector cut-off current ICBO VCB=-20V, IE=0 -100 A

Collector cut-off current ICEO VCE=-60V, IE=0 -5 mA

Emitter cut-off current IEBO VEB=-4V, IC=0 -1 mA
(1)
hFE(1) VCE=-2V, IC=-1A 40 320
DC current gain (1)
(1)
hFE(2) VCE=-2V, IC=-0.1A 40

Collector-emitter saturation voltage(1) VCE(sat) (1) IC=-2A, IB=-200mA -1 V
(1) (1)
Base-emitter voltage VBE VCE=-2V, IC=-1A -1.5 V

Transition frequency fT VCE=-5V, IC=-500mA,f=1MHz 5 MHz
(1)
Pulse Test: Pulse Width=300s,Duty Cycle2.0%
CLASSIFICATION OF hFE(1)
Rank C D E F

Range 40-80 60-120 100-200 160-320
2SB507(PNP)
TO-220 Transistor

Typical Characteristics