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STS8DNH3LL
Dual n-channel 30 V - 0.018 - 8 A - SO-8
low gate charge STripFETTM III Power MOSFET

Features
Type VDSS RDS(on) max ID
STS8DNH3LL 30 V < 0.022 8A

Optimal RDS(on) x Qg trade-off @ 4.5 V
Conduction losses reduced
Switching losses reduced

Application
S0-8

t( s)
Switching applications
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Description
Figure 1.
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Internal schematic diagram

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This product utilizes the latest advanced design

le
rules of ST's proprietary STripFETTM technology
which is suitable for the most demanding DC-DC
converter applications where high efficiency is
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required.


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Table 1. let Device summary



O bs Order code

STS8DNH3LL
Marking

8DH3LL
Package

SO-8
Packaging

Tape & reel




June 2008 Rev 2 1/12
www.st.com 12
Contents STS8DNH3LL


Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) .......................... 6

3 Test circuit ................................................ 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11


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d uc
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2/12
STS8DNH3LL Electrical ratings


1 Electrical ratings

Table 2. Absolute maximum ratings
Symbol Parameter Value Unit

VDS Drain-source voltage (vGS = 0) 30 V
VGS Gate- source voltage