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BDW83C
BDW84C
COMPLEMENTARY SILICON POWER DARLINGTON
TRANSISTORS
s BDW83C IS A SGS-THOMSON PREFERRED
SALESTYPE
s COMPLEMENTARY PNP - NPN DEVICES
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s HIGH DC CURRENT GAIN
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL 3
2
EQUIPMENT 1
DESCRIPTION
The BDW83C is a silicon epitaxial-base NPN TO-218
power monolithic Darlington transistor mounted in
Jedec TO-218 plastic package. It is intended for
use in power linear and switching applications.
The complementary type is BDW84C.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW83C
PNP BDW84C
V CBO Collector-Base Voltage (I E = 0) 100 V
V CEO Collector-Emitter Voltage (I B = 0) 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 15 A
I CM Collector Peak Current 40 A
IB Base Current 0.5 A
P tot Total Dissipation at T c 25 o C 130 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
June 1997 1/4
BDW83C / BDW84C
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 0.96 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = 100 V 500