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Ie\Q IPB023N06N3 G
TM
"%&$!"# 3 Power-Transistor
Product Summary
Features
V 9H .( J
Q #451<6 B 78 65AE5>3 I C D89 1>4 C
B
? 89 B G9 >7
3 I>3 53
R 9H"[Z#$YMd *&+ Y"
9=9 53 ? ? 5B5B
Q ( @D J54 D 8>? < 7I 6 B 3 ? >F D C
I9 ),( 6
Q H3 5<5>D 5 3 81B HR 9H"[Z# @B 4E3 D ( &
< 71D 75 ?
Q. 5B < G ? >B 9D 5 + 9H"[Z#
I? 5CC 1>3
Q ' 3 81>>5< >? B < 5<
=1< 5F
Q 1F 1>3 85 D D
1< 5C 54
Q ) 2 655 @< 9 + ? " , 3 ? =@<1>D
B 1D>7 9
)#
Q * E1<654 13 3 ? B >7 D $
9 9 49 ? ? D 75D 9 9 ?
6 B 1B 1@@<3 1D >C
Q" 1< 75>655 13 3 ? B >7 D #
? B 49 ?
Type #) ' ' !
Package E=%ID*.+%/
Marking (*+C(.C
Maximum ratings, 1D V T E>< C ? D G95 C 954
T 5C 85B C @53 6 9
Parameter Symbol Conditions Value Unit
*#
? >D EC 4B > 3 EB5>D
9>E? 19 B I9 T 8 T ),( 6
T 8 T ),(
B +#
) E< 54 4B > 3 EB5>D
C 19 I 9$\aX_Q T 8 T -.(
F 1>3 85 5>5B C>7< @E< 5,#
1< 7I 9 5 C E 6H I 9 R =H " ++( Y@
!1D C EB5 F <175
5 ? 3 ? D V =H q*( J
49C@1D
) ? G5B C 9 9 >
? P `[` T 8 T *), K
( @5B 9 1>4 C ? B D
1D>7 D 175 5=@5B EB
1D 5 T V T _`S
T
# 3 <=1D 3 1D B #' #
9 93 57? I
)#
$ , - 1>4 $ ,
*#
B 9 9 D 54 B D8 85 @ C 5 ? B
EB5>DC <=9 2 I 2 ? >4G95 G9 1>R `T@8
% / D 3 89 9 12 < D 3 1BI
+#
, 55 67EB 6 B B 45D < 9 ? B 9 >
9 5 ? =? 5 19 >6 =1D
54 ?
,#
, 55 67EB 6 B B 45D < 9 ? B 9 >
9 5 ? =? 5 19 >6 =1D
54 ?
+ 5F
@175
IPB023N06N3 G
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
-85B B 9D 5 :E>3 D > 3 1C
=1< 5CC 1>3 9? 5 R `T@8 % % (&/ A'K
=1< 5CC 1>3
-85B B 9D 5 R `T@6 >9 ? @B
=9 =1<6 ? D 9
>D
:E>3 D > 1=2 9
9? 5>D 3 =V 3 ? ? <>7 1B -#
9 51 % % ,(
Electrical characteristics, 1D V T E>< C ? D G95 C 954
T 5C 85B C @53 6 9
Static characteristics
B >C EB5 2 B
19 ? 3 51;4? G> F <175
? D V "7G#9HH V =H . I 9 = .( % % J
5 8B 8? 4 ? D
!1D D 5C < F <175 V =H"`T# V 9H4V =H I 9 W * + ,
V 9H . V =H .
05B 71D F <175 4B > 3 EB5>D
? 5 ? D 19 B I 9HH % (&) * s6
T V T
V 9H . V =H .
% *( *((
T V T
!1D ? EB5 <
5C 3 51;175 3 EB5>D
B I =HH V =H . V 9H . % ) )(( Z6
B >C EB5 ? >C 1D B 9D 5
19 ? 3 D 5 5CC 1>3 R 9H"[Z# V =H . I 9 % )&1 *&+ Y"
!1D B 9D 5
5 5CC 1>3 R= % )&, % "
gV 9Hg5*gI 9gR 9H"[Z#YMd
I^MZ_O[ZPaO`MZOQ g R_ 0+ ).. % H
I 9
-#
5F3 5 ? > == H == H
== 5@? HI )
9 + G9 3 =* ? >5 <
D8 1I5B W= D 3 ; 3 ? @@5B 51 6 B 19
89 1B ? 4B >
3 ? >>53 D >
) 9 F D 1<9 C 9 19
9? C 5B39 > D< B<
+ 5F
@175
IPB023N06N3 G
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic characteristics
#>@ED 1@13 9 5
3 D1>3 C U__ % )*((( ).((( \<
V =H . V 9H .
( ED 3 1@13 9 5
@ED D1>3 C [__ % *.(( %
f & " J
+ 5F C D1>C 5B 1@13 9 5
5B5 B 6 3 D1>3 C ^__ % 0/ %
-EB > 45< D
>? 1I 9
=5 t P"[Z# % +) % Z_
+ 95 D
C 9 =5 t^ V 99 . V =H . % 1( %
-EB 6 45< D
>? 6 1I 9=5 t P"[RR# I 9 R =4+" % .* %
1< D
<9 =5 tR % *+ %
!1D 81B 81B D 9D C.#
5 S5 13 5B 9
C3
!1D D C EB5 3 81B
5 ? ? 3 75 Q S_ % .* % Z8
5 ? 19
!1D D 4B > 3 81B
75 Q SP % )+ %
V 99 . I 9
, G9 89 3 81B
D >7
3 75 Q _c % +0 %
V =H D .
?
5
!1D 3 81B D D
75 ? 1< QS % ),1 )10
!1D @< 51E F <175
5 1D ? D V \XM`QMa % -&) % J
( ED 3 81B
@ED 75 Q [__ V 99 . V =H . % )*( ).( Z8
Reverse Diode
9 45 3 ? >D EC 6 B 4 3 EB5>D
? 9>? ? G1B B IH % % ),( 6
T 8 T
9 45 @E< 5 3 EB5>D
? C B I H$\aX_Q % % -.(
V =H . I <
9 45 6 B 4 F <175
? ? G1B ? D V H9 % (&1 )&* J
T V T
+ 5F C B ? F I D
5B5 53 5B 9 =5 t ^^ V G . I <4100A % .1 % Z_
Q ^^ Pi <'Pt WC
5B5 53 5B 75
+ 5F C B ? F I 3 81B % )*( % Z8
.#
9 5 ? 71D 75
, 55 67EB 6 B 5 3 81B @1B
1=5D 456>9? >
5B 9 D 9
+ 5F
@175
IPB023N06N3 G
1 Power dissipation 2 Drain current
P `[`4R"T 8# I 94R"T 8 V =H" .
250 160
200
120
150
P tot [W]
I D [A]
80
100
40
50
0 0
0 50 100 150 200 0 50 100 150 200
T C [