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Philips Semiconductors Product specification

Insulated Gate Bipolar Transistor BUK856-400 IZ
Protected Logic-Level IGBT

GENERAL DESCRIPTION QUICK REFERENCE DATA
Protected N-channel logic-level SYMBOL PARAMETER MIN. TYP. MAX. UNIT
insulated gate bipolar power
transistor in a plastic envelope, V(CL)CER Collector-emitter clamp voltage 370 410 500 V
intended for automotive ignition VCEsat Collector-emitter on-state voltage 2.2 V
applications. The device has IC Collector current (DC) 20 A
built-in zener diodes providing Ptot Total power dissipation 100 W
active collector voltage clamping ECERS Clamped energy dissipation 300 mJ
and ESD protection up to 2 kV.

PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION c
tab

1 gate

2 collector
3 emitter g

tab collector
1 23 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCE Collecter-emitter voltage tp 500