Text preview for : std40nf06lz.pdf part of ST std40nf06lz . Electronic Components Datasheets Active components Transistors ST std40nf06lz.pdf
Back to : std40nf06lz.pdf | Home
STD40NF06LZ
N-CHANNEL 60V - 0.020 - 40A DPAK
Zener-Protected STripFETTM II POWER MOSFET
TYPE VDSS RDS(on) ID
STD40NF06LZ 60 V < 25 m 40 A
s TYPICAL RDS(on) = 0.020
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s LOGIC LEVEL GATE DRIVE 3
s SURFACE-MOUNTING DPAK (TO-252) 1
POWER PACKAGE IN TAPE & REEL
DPAK
(SUFFIX "T4") TO-252
s BUILT-IN ZENER DIODES TO IMPROVE ESD (Suffix "T4")
PROTECTION UP TO 2kV
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM" INTERNAL SCHEMATIC DIAGRAM
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITOTS,
COMPUTER AND INDUSTRIAL
APPLICATION
s WELDING EQUIPMENT
s AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k) 60 V
VGS Gate- source Voltage