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BF1108; BF1108R
Silicon RF switches
Rev. 04 -- 29 May 2008 Product data sheet
1. Product profile
1.1 General description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
low loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Specially designed for low loss RF switching up to 1 GHz
1.3 Applications
I Various RF switching applications such as:
N Passive loop through for VCR tuner
N Transceiver switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Lins(on) on-state insertion loss RS = RL = 50 ; f 1 GHz; [1] - - 2 dB
VSK = VDK = 0 V; IF = 0 mA
ISLoff off-state isolation RS = RL = 50 ; f 1 GHz; 30 - - dB
VSK = VDK = 5 V; IF = 1 mA
RDSon drain-source on-state VKS = 0 V; ID = 1 mA - 12 20
resistance
VGS(p) gate-source pinch-off VDS = 1 V; ID = 20