Text preview for : hn4c05ju_071101.pdf part of Toshiba hn4c05ju 071101 . Electronic Components Datasheets Active components Transistors Toshiba hn4c05ju_071101.pdf



Back to : hn4c05ju_071101.pdf | Home

HN4C05JU
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)


HN4C05JU
Low Frequency Amplifier Applications Unit: mm
Muting Applications
Switching Applications

Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.)
:@ IC = 10mA/ IB = 0.5mA)
High Collector Current :IC=400mA(Max.)


Absolute Maximum Ratings (Ta = 25