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BU208D/508D/508DFI
HIGH VOLTAGE FASTSWITCHING NPN
POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPES
s HIGH VOLTAGE CAPABILITY
s U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
s JEDEC TO-3 METAL CASE TO-3
s NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
1
2
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION 3
3
The BU208D, BU508D and BU508DFI are 2 2
manufactured using Multiepitaxial Mesa TO-218 1 ISOWATT218 1
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Unit
V CES Collector-Emitter Voltage (V BE = 0) 1500 V
V CEO Collector-Emitter Voltage (I B = 0) 700 V
V EBO Emitter-Base Voltage (I C = 0) 10 V
IC Collector Current 8 A
I CM Collector Peak Current (tp < 5 ms) 15 A
TO - 3 TO - 218 ISOW ATT218
P tot T otal Dissipation at T c = 25 o C 150 125 50 W
o
T s tg Storage Temperature -65 to 150 -65 to 150 -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 150 150 C
June 1996 1/8
BU208D/508D/508DFI
THERMAL DATA
TO-3 T O-218 ISOW AT T218
o
R thj -ca se Thermal Resistance Junction-case Max 1 1 2.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit
I CES Collector Cut-off V CE = 1500 V 1 mA
o
Current (V BE = 0) V CE = 1500 V T j = 125 C 2 mA
I EBO Emitter Cut- off Current V EB = 5 V 300 mA
(I C = 0)
V CE(sat) Collector-Emitter I C = 4.5 A IB = 2 A 1 V
Saturation Voltage
VCEO(s us) Collector-Emitter I C = 100 m A 700 V
Sustaining Voltage
V BE(sat ) Base-Emitter I C = 4.5 A IB = 2 A 1.3 V
Saturation Voltage
INDUCT IVE LOAD I C = 4.5 A hF E = 2.5 V CC = 140 V
ts Storage Time LC = 0.9 mH LB = 3