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SEMICONDUCTOR BF423
TECHNICAL DATA SILICON PNP TRIPLE DIFFUSED TYPE


HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION.
COLOR TV CHROMA OUTPUT APPLICATIONS.
B C

FEATURES
High Voltage : VCEO>-300V




A
Complementary to BF422.
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX




J
D 0.45
E 1.00
MAXIMUM RATING (Ta=25 ) F 1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT H 0.45
H J _
14.00 + 0.50
Collector-Base Voltage VCBO -250 V F F K 0.55 MAX
L 2.30
Collector-Emitter Voltage VCEO -250 V M 0.45 MAX
N 1.00




C
VEBO 1 2 3
Emitter-Base Voltage -5 V




L




M
DC IC -50 1. EMITTER
2. COLLECTOR
Collector Current mA
ICP 3. BASE
Peak -100
Collector Power Dissipation PC 625 mW
Base Current IB -50 mA TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -65 150




ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VCB=-200V, IE=0 - - -10 nA
Collector Cut-off Current ICBO
VCB=-200V, IE=0, Tj=150 - - -10 A

Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -50 nA
DC Current Gain hFE VCE=-20V, IC=-25mA 50 - - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-30mA, IB=-5mA - - -0.6 V
Base-Emitter Voltage VBE VCE=-20V, IC=-25mA - -0.75 - V
Transition Frequency fT VCE=-10V, IC=-10mA 60 - - MHz
Reverse Transfer Capacitance Cre VCB=-30V, IE=0, f=1MHz - - 1.6 pF




1998. 10. 31 Revision No : 2 1/3
BF423


IC - VCE (LOW VOLTAGE REGION) hFE - IC

-60 500
COLLECTOR CURRENT IC (mA)




COMMON COMMON EMITTER
300




DC CURRENT GAIN hFE
3.0 1.6 1.0 0.6 EMITTER Ta=25 C
-50 Ta=25 C
VCE =-20V
0.4
-40 0.3
100

-30 0.2 50
-10
0.15 30
-20 -5
0.1
I B =0.05mA
-10 10
0
0 5
0 -4 -8 -12 -16 -20 -24 -28 -0.3 -1 -3 -10 -30 -100


COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)



hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION



500 -5
COMMON EMITTER COMMON EMITTER
300 -3
DC CURRENT GAIN hFE




V CE =-10V Ta=25 C
VOLTAGE VCE(sat) (V)




Ta=100 C
Ta=25 C
100 -1
Ta=-25 C

50 -0.5
30 -0.3

=10
I C/I B
5
10 -0.1
2
5 -0.05
-0.3 -1 -3 -10 -30 -100 -0.3 -1 -3 -10 -30 -100


COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)




VCE(sat) - IC IC - VBE
COLLECTOR-EMITTER SATURATION




-5 -50
COLLECTOR CURRENT IC (mA)




COMMON EMITTER COMMON EMITTER
-3 I C /IB =5 VCE =10V
VOLTAGE VCE(sat) (V)




-40

-1
-30
-0.5
C
00 C



Ta=-25 C
Ta=25




-0.3 -20
Ta=1




0 C
Ta=10 25
-25 -10
-0.1

-0.05 0
-0.3 -1 -3 -10 -30 -100 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V)




1998. 10. 31 Revision No : 2 2/3
BF423


Cob, Cre - VCB fT - IC
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
REVERSE TRANSFER CAPACITANCE Cre (pF)




TRANSITION FREQUENCY fT (MHz)
10 500
I E =0 COMMON EMITTER
f=1MHz 300 Ta=25 C
8 Ta=25 C

VCE =-20V
6 100
VCE =-10V

4 50
30
C ob
2
C re

0 10
0 -40 -80 -120 -160 -200 -240 -280 -0.3 -1 -3 -10 -30


COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT IC (mA)




Pc - Ta SAFE OPERATING AREA
COLLECTOR POWER DISSIPATION




1000 -200
I C MAX.(PULSED) *
COLLECTOR CURRENT IC (mA)




-100




1m
800 1
10 0ms




s
I C MAX.(CONTINUOUS) 0m *
-50 s *
-30 *
PC (mW)




600 DC
OP
ER
AT
IO
400 -10 N

-5
200
-3 SINGLE NONREPETITIVE
*
PULSE Ta=25 C
0 CURVES MUST BE DERATED
0 40 80 120 160 200 LINEARLY WITH INCREASE
-1 IN TEMPERATURE.
-0.5
AMBIENT TEMPERATURE Ta ( C) -3 -10 -30 -100 -300

COLLECTOR-EMITTER VOLTAGE VCE (V)




1998. 10. 31 Revision No : 2 3/3