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SEMICONDUCTOR KRC836E~KRC842E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR


SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B

B1

FEATURES
With Built-in Bias Resistors.
1 6 DIM MILLIMETERS




C
Simplify Circuit Design. A _
1.6 + 0.05




A1
_




A
A1 1.0 + 0.05
Reduce a Quantity of Parts and Manufacturing Process. 2 5 _




C
B 1.6 + 0.05
B1 _
1.2 + 0.05




D
3 4 C 0.50
D _
0.2 + 0.05
H _
0.5 + 0.05
J _
0.12 + 0.05
EQUIVALENT CIRCUIT P P
P 5

OUT TYPE NO. R1(k ) R2(k )




H




J
KRC836E 1 10
R1
IN KRC837E 2.2 2.2 1. Q1 COMMON (EMITTER)
R2 2. Q2 COMMON (EMITTER)
KRC838E 2.2 10 3. Q2 IN (BASE)
4. Q2 OUT (COLLECTOR)
KRC839E 4.7 10 5. Q1 IN (BASE)
6. Q1 OUT (COLLECTOR)
COMMON KRC840E 10 4.7
KRC841E 47 10
TES6
KRC842E 100 100
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4




Q1
Q2




MAXIMUM RATING (Ta=25 ) 1 2 3

CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage KRC836E~842E VO 50 V
KRC836E 10, -5
KRC837E 12, -10
KRC838E 12,-5
Input Voltage KRC839E VI 20, -7 V
KRC840E 30, -10
KRC841E 40, -15
KRC842E 40, -10
Output Current IO 100 mA
Power Dissipation PD * 200 mW
KRC836E~842E
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Rating. 6 5 4
Marking
Lot No.
MARK SPEC
TYPE KRC836E KRC837E KRC838E KRC839E KRC840E KRC841E KRC842E Type Name

MARK Y2 Y4 Y5 Y6 Y7 Y8 Y9

1 2 3



2008. 9. 23 Revision No : 3 1/6
KRC836E~KRC842E

ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current KRC836E~842E IO(OFF) VO=50V, VI=0 - - 500 nA
KRC836E VO=5V, IO=5mA 33 - -
KRC837E VO=5V, IO=20mA 20 - -
KRC838E VO=5V, IO=10mA 33 - -
DC Current Gain KRC839E GI VO=5V, IO=10mA 30 - -
KRC840E VO=5V, IO=10mA 24 - -
KRC841E VO=5V, IO=5mA 33 - -
KRC842E VO=5V, IO=5mA 62 - -
KRC836E IO=10mA, II=0.5mA - - 0.3
KRC837E IO=10mA, II=0.5mA - 0.1 0.3
KRC838E IO=10mA, II=0.5mA - - 0.3
Output Voltage KRC839E VO(ON) IO=10mA, II=0.5mA - 0.1 0.3 V
KRC840E IO=10mA, II=0.5mA - 0.1 0.3
KRC841E IO=10mA, II=0.5mA - 0.1 0.3
KRC842E IO=5mA, II=0.25mA - 0.1 0.3
KRC836E VO=0.3V, IO=20mA - 0.98 3
KRC837E VO=0.3V, IO=20mA - 1.83 3
KRC838E VO=0.3V, IO=20mA - 1.22 3
Input Voltage (ON) KRC839E VI(ON) VO=0.3V, IO=20mA - 1.76 2.5 V
KRC840E VO=0.3V, IO=2mA - 2 3
KRC841E VO=0.3V, IO=2mA - 3.9 5
KRC842E VO=0.3V, IO=1mA - 1.64 3
KRC836E 0.3 0.63 -
KRC837E 0.5 1.15 -
KRC838E 0.3 0.67 -
Input Voltage (OFF) KRC839E VI(OFF) VCC=5V, IO=100 A 0.3 0.82 - V
KRC840E 0.8 1.68 -
KRC841E 1 3.09 -
KRC842E 0.5 1.17 -
Transition Frequency KRC836E~842E f T* VO=10V, IO=5mA - 250 - MHz
KRC836E - - 7.2
KRC837E - - 3.8
KRC838E - - 3.8
Input Current KRC839E II VI=5V - - 1.8 mA
KRC840E - - 0.88
KRC841E - - 0.16
KRC842E - - 0.15
Note : * Characteristic of Transistor Only.



2008. 9. 23 Revision No : 3 2/6
KRC836E~KRC842E


IO - VI(ON) IO - VI(ON)
KRC836E KRC837E
100 100




OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)




50 50
30 30

10
10 5
Ta=25 C
5 Ta=25 C 3 Ta=-25 C
3 Ta=-25 C Ta=100 C
Ta=100 C
1
0.5
1 0.3
0.5 VO = 0.2V VO = 0.2V
0.3 0.1
0.1 0.3 1 3 10 0.1 0.3 1 3 10


INPUT ON VOLTAGE VI(ON) (V) INPUT ON VOLTAGE VI(ON) (V)



IO - VI(OFF) IO - VI(OFF)
KRC836E KRC837E
3k 3k
OUTPUT CURRENT IO (