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PD - 90550D
IRFF9130
JANTX2N6849
REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849
HEXFET TRANSISTORS JANS2N6849
THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564
100V, P-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRFF9130 -100V 0.30 -6.5A
The HEXFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis- TO-39
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt- Features:
age control, very fast switching, ease of parelleling n Repetitive Avalanche Ratings
and temperature stability of the electrical parameters. n Dynamic dv/dt Rating
They are well suited for applications such as switch- n Hermetically Sealed
ing power supplies, motor controls, inverters, chop- n Simple Drive Requirements
pers, audio amplifiers and high energy pulse circuits. n Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = -10V, TC = 25