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PMV65XP
P-channel TrenchMOSTM extremely low level FET
Rev. 01 -- 28 September 2004 Product data sheet




1. Product profile

1.1 General description
P-channel enhancement mode field effect transistor in a plastic package using
TrenchMOSTM technology.

1.2 Features
s Low threshold voltage s Low on-state resistance.


1.3 Applications
s Low power DC-to-DC converters s Battery management
s Load switching s Battery powered portable equipment.


1.4 Quick reference data
s VDS -20 V s ID -3.9 A
s RDSon 76 m s Qgd = 0.65 nC (typ).


2. Pinning information
Table 1: Discrete pinning
Pin Description Simplified outline Symbol
1 gate (g)
3 d
2 source (s)
3 drain (d)
g

1 2
s
SOT23
003aaa671
SOT23
Philips Semiconductors PMV65XP
P-channel TrenchMOSTM extremely low level FET



3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
PMV65XP SOT23 Plastic surface mounted package; 3 leads SOT23


4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25