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BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
Rev. 01 -- 17 July 2009 Product data sheet
1. Product profile
1.1 General description
NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I Low collector capacitance
I Low collector-emitter saturation voltage
I Closely matched current gain
I Reduces number of components and board space
I No mutual interference between the transistors
I AEC-Q101 qualified
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emitter voltage open base - - 65 V
IC collector current - - 100 mA
hFE DC current gain VCE = 5 V; IC = 2 mA 200 300 450
NXP Semiconductors BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
6 5 4 6 5 4
2 base TR1
3 collector TR2
TR2
4 emitter TR2 TR1
1 2 3
5 base TR2
1 2 3
6 collector TR1
sym020
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BC846DS SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
4. Marking
Table 4. Marking codes
Type number Marking code
BC846DS ZK
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - 80 V
VCEO collector-emitter voltage open base - 65 V
VEBO emitter-base voltage open collector - 6 V
IC collector current - 100 mA
ICM peak collector current single pulse; - 200 mA
tp 1 ms
IBM peak base current single pulse; - 200 mA
tp 1 ms
Ptot total power dissipation Tamb 25