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STP/F21NM60ND-STW21NM60ND
STB21NM60ND-STI21NM60ND
N-channel 600 V, 0.17 17 A FDmeshTM II Power MOSFET
,
D 2PAK, I2PAK, TO-220FP, TO-220, TO-247
Features
VDSS @ RDS(on)
Type ID
TJmax max 3
3
3 1
2
STB21NM60ND 650 V < 0.22 17 A 1
1
2
TO-220 D2PAK
STI21NM60ND 650 V < 0.22 17 A TO-220FP
STF21NM60ND 650 V < 0.22 17 A(1)
STP21NM60ND 650 V < 0.22 17 A
STW21NM60ND 650 V < 0.22 17 A
1. Limited only by maximum temperature allowed 3
12 3
2
The worldwide best RDS(on)*area amongst the 1
I2PAK TO-247
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance Figure 1. Internal schematic diagram
Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The FDmeshTM II series belongs to the second
generation of MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode. It is therefore strongly
recommended for bridge topologies, in ZVS
phase-shift converters.
Table 1. Device summary
Order codes Marking Package Packaging
STB21NM60ND 21NM60ND D