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MJE3055
Plastic-Encapsulate Power Transistors
1
2
1. BASE 3
2. COLLECTOR
3. EMITTER TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 70 Vdc
Emitter-Base VOltage VEBO 5.0 Vdc
Collector Current (DC) IC(DC) 10 Adc
Total Device Disspation TC=25 C 75 W
PD
Derate above 25 C 0.6 W/ C
Operating and Storage Junction Temperature Range Tj , Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 200 mAdc, IB=0) V(BR)CEO 60 - Vdc
Collector-Base Breakdown Voltage (IC= 1.0 mAdc, IE=0) V(BR)CBO 70 - Vdc
Emitter-Base Breakdown Voltage (IE= 1.0 mAdc, IC=0) V(BR)EBO 5.0 - Vdc
Collector Cutoff Current (VCB= 70 Vdc, IE=0) ICBO - 1.0 nAdc
Emitter Cutoff Current (VEB= 5.0Vdc, IC =0) IEBO - 5.0 nAdc
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MJE3055
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min TYP Max Unit
ON CHARACTERISTICS
DC Current Gain (1)
(IC= 4 Adc, VCE= 4 Vdc) hFE (1) 20 - 100
-
(IC= 10 Adc, VCE= 4 Vdc) hFE (2) 5 - -
Collector-Emitter Saturation Voltage (1)
(IC= 4 Adc, IB= 400 mAdc) - - 1.1
VCE(sat) Vdc
(IC= 10 Adc, IB= 3.3 Adc) - - 8
Base-Emitter On Voltage (1) VBE(ON) -
- 1.8 Vdc
(IC= 4 Adc, VCE = 4 Vdc)
Current-Gain-Bandwidth Product - -
(IC= 500 mAdc, VCE=10 Vdc) fT 2 MHz
Note:
1. Pulse Test: PW < 300us, Duty Cycle < 2.0%
_ _
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MJE3055
TO-220 Outline Dimensions unit:mm
D
A TO-220
C1 Dim Min Max
A 4.47 4.67
F
A1 2.52 2.82
B 0.71 0.91
H 1.37
B1 1.17
C 0.31 0.53
E1
E C1 1.17 1.37
D 10.01 10.31
B1
E 8.50 8.90
L1 A1 E1 12.06 12.446
B G 2.54 TYP
G1 4.98 5.18
F 2.59 2.89
H 0.00 0.30
G C L 13.4 13.8
G1 L1 3.56 3.96
3.73 3.93
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