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BCP69
PNP Transistor
Elektronische Bauelemente
Silicon Epitaxial Transistor
RoHS Compliant Product
SOT-223
Description
The BCP69 is designed for guse in
low voltage and medium power
applications.
Features
* VCEO : -20V
* IC : 1A
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 6.70 7.30 B 13 T YP.
C
C 2.90 3.10 J 2.30 REF.
D 0.02 0.10 1 6.30 6.70
BCP69
Date Code E 0C 10 C 2 6.30 6.70
I 0.60 0.80 3 3.30 3.70
H 0.25 0.35 4 3.30 3.70
B C E 5 1.40 1.80
o
MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified)
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 25 V
VCEO Collector-Emitter Voltage - 20 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -1 A
PD Total Power Dissipation 1.5 W
TJ,Tstg Junction and Storage Temperature -65~-150 C
O
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ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter Symbol Min Typ. Max Uni Test Conditions
Collector-Base Breakdown Voltage BVCBO - 25 - - V I C=-100