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CXT5551
TRANSISTOR (NPN)
SOT-89
FEATURES
Switching and amplification in high voltage
Applications such as telephony 1
1. BASE
Low current(max. 600mA) 2. COLLECTOR
High voltage(max.180v) 3. EMITTER
Marking: 1G6
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 180 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.6 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -65-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100 A,IE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE=10 A,IC=0 6 V
Collector cut-off current ICBO VCB=120V,IE=0 50 nA
Emitter cut-off current IEBO VEB=4V,IC=0 50 nA
hFE(1) VCE=5V,IC=1mA 80
DC current gain hFE(2) VCE=5V,IC=10mA 80 300
hFE(3) VCE=5V,IC=50mA 30
VCE(sat) IC=10mA,IB=1mA 0.15 V
Collector-emitter saturation voltage
VCE(sat) IC=50mA,IB=5mA 0.2 V
VBE(sat) IC=10mA,IB=1mA 1 V
Base-emitter voltage
VBE(sat) IC=50mA,IB=5mA 1 V
Transition frequency fT VCE=10V,IC=10mA,f=100MHz 100 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6 pF
VCE=5V,Ic=0.2mA,
Noise figure NF 8 dB
f=10Hzto15.7KHZ,Rs=10
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
CXT5551
Typical Characteristosc
2
JinYu www.htsemi.com
semiconductor
Date:2011/05