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June 2002
AO4413
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
The AO4413 uses advanced trench technology to VDS (V) = -30V
provide excellent RDS(ON), and ultra-low low gate ID = -15A
charge with a 25V gate rating. This device is suitable RDS(ON) < 7m (VGS = -20V)
for use as a load switch or in PWM applications. RDS(ON) < 8.5m (VGS = -10V)
D
SOIC-8
Top View
S D
S D
S D G
G D S
Absolute Maximum Ratings TA=25