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2SA1832
PNP TRANSISTOR
3
P b Lead(Pb)-Free
1
2
FEATURES:
* High voltage and high current
* Excellent hFE linearity SOT-523(SC-75)
* Complementary to 2SC4738
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current Continuous IC -150 mA
Total Device Dissipation PD 100 mW
Thermal Resistance Junction to Ambient RJA 125 /W
Junction Temperature TJ -55 to +125
Storage Temperature Tstg -55 to +125
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage VCBO IC=-100A,IE=0 -50 V
Collector-emitter breakdown voltage VCEO* IC=-1mA,IB=0 -50 V
Emitter-base breakdown voltage VEBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -100 nA
Emitter cut-off current IEBO VEB =-5V, IC=0 -100 nA
DC current gain hFE VCE=-6V,IC=-2mA 120 400
Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.3 V
Transition frequency fT VCE=-10V,IC=-1mA 80 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f =1MHz 4 7 pF
CLASSIFICATION OF hFE
Rank Y GR
Range 120-240 200-400
Marking SY SG
WEITRON 1/3 30-Jan-08
http://www.weitron.com.tw
2SA1832
Typical Characteristics
WEITRON 2/3 30-Jan-08
http://www.weitron.com.tw
2SA1832
SOT-523 Outline Dimensions (SC-75) Unit:mm
A
SOT-523
Dim Min Max
A 0.30 0.50
TOP VIEW B B 0.70 0.90
C 1.45 1.75
D
D - 0.50
G E 0.15 0.40
E
H
G 0.80 1.00
H 1.40 1.80
J 0.00 0.10
K 0.70 1.00
J
L
M
L 0.37 0.48
M 0.10 0.25
WEITRON 3/3 30-Jan-08
http://www.weitron.com.tw