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STP4NM60
STD3NM60, STD3NM60-1
N-channel 600 V, 1.3 3 A TO-220, DPAK, IPAK
,
Zener-protected MDmeshTM Power MOSFET
Features
VDSS RDS(on)
Type ID PW
(@Tjmax) max 3
1
STD3NM60 3
3A 42 W 1
2
DPAK
STD3NM60-1 650 < 1.5
TO-220
STP4NM60 4A 69 W
3
2
1
High dv/dt and avalanche capabilities
IPAK
Improved ESD capability
Low input capacitance and gate charge
Low gate input resistance Figure 1. Internal schematic diagram
Tight process control and high manufacturing
yields
Applications
Switching
Description
Modems technology applies the benefits of the
multiple drain process to STMicroelectronics' well-
known PowerMESHTM horizontal layout structure.
The resulting product offers low on-resistance,
high dv/dt capability and excellent avalanche
characteristics.
Table 1. Device summary
Order code Marking Package Packing
STD3NM60 D3NM60 DPAK Tape and reel
STD3NM60-1 D3NM60 IPAK Tube
STP4NM60 P4NM60 TO-220 Tube
September 2009 Doc ID 8370 Rev 4 1/17
www.st.com 17
Contents STD3NM60, STD3NM60-1, STP4NM60
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17 Doc ID 8370 Rev 4
STD3NM60, STD3NM60-1, STP4NM60 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value Unit
Symbol Parameter
STD3NM60
STP4NM60
STD3NM60-1
VDS Drain-source voltage (VGS= 0) 600 V
VGS Gate- source Voltage