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SEMICONDUCTOR KF3N80D/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR

General Description
KF3N80D

This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K
avalanche characteristics. It is mainly suitable for LED Lighting and L
DIM MILLIMETERS
C D A _
6.60 + 0.20
switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
FEATURES B E _
2.70 + 0.15
F _
2.30 + 0.10
VDSS= 800V, ID= 2.7A G 0.96 MAX
H 0.90 MAX
Drain-Source ON Resistance : RDS(ON)=4.2 @VGS = 10V H
J J _
1.80 + 0.20
E
K _
2.30 + 0.10
Qg(typ) =12nC G N
L _
0.50 + 0.10
F F M M _
0.50 + 0.10
N 0.70 MIN
O Max 0.1
MAXIMUM RATING (Ta=25 )
1 2 3



CHARACTERISTIC SYMBOL RATING UNIT
O


Drain-Source Voltage VDSS 800 V
Gate-Source Voltage VGSS 30 V
DPAK (1)
@TC=25 2.7
ID
Drain Current @TC=100 1.7 A
Pulsed (Note1) IDP 6* KF3N80I
Single Pulsed Avalanche Energy EAS A H
175 mJ
(Note 2) C J DIM MILLIMETERS
_
D
Repetitive Avalanche Energy A 6.6 + 0.2
EAR 4.4 mJ B _
6.1 + 0.2
(Note 1)
C _
5.34 + 0.3
Peak Diode Recovery dv/dt
B




dv/dt 4.5 V/ns D _
0.7 + 0.2
(Note 3) E _
9.3 +0.3
Tc=25 69.4 W M F _
2.3 + 0.2
Drain Power
K




PD P G _
0.76 + 0.1
Dissipation Derate above 25 0.55 W/ N H _
2.3 + 0.1
J _
0.5+ 0.1
E




Maximum Junction Temperature Tj 150 K _
1.8 + 0.2
L _
0.5 + 0.1
Storage Temperature Range Tstg -55 150 G
M _
1.0 + 0.1
F F L
Thermal Characteristics N 0.96 MAX
P _
1.02 + 0.3
Thermal Resistance, Junction-to-Case RthJC 1.8 /W
Thermal Resistance, Junction-to- 1 2 3 1. GATE
RthJA 110 /W 2. DRAIN
Ambient
3. SOURCE
* : Drain current limited by maximum junction temperature.


PIN CONNECTION

IPAK(1)
D




G


S




2012. 8. 10 Revision No : 0 1/6
KF3N80D/I

ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 800 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.8 - V/
Drain Cut-off Current IDSS VDS=800V, VGS=0V - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.35A - 3.4 4.2
Dynamic
Total Gate Charge Qg - 12 -
VDS=480V, ID=3A
Gate-Source Charge Qgs - 6 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 2 -
Turn-on Delay time td(on) - 25 -
VDD=400V
Turn-on Rise time tr - 27 -
ID=3A ns
Turn-off Delay time td(off) - 60 -
RG=25 (Note4,5)
Turn-off Fall time tf - 30 -
Input Capacitance Ciss - 520 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 60 - pF
Reverse Transfer Capacitance Crss - 9 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 3
VGS Pulsed Source Current ISP - - 12
Diode Forward Voltage VSD IS=2.7A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=3A, VGS=0V, - 450 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/us - 3.0 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =37mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.



Marking

1 1
KF3N80 KF3N80
D 001 2 I 001 2




1 PRODUCT NAME

2 LOT NO




2012. 8. 10 Revision No : 0 2/6
KF3N80D/I



Fig1. ID - VDS Fig2. ID - VGS
1
10 10
VGS=10V VDS=20V
Drain Current ID (A)




Drain Current ID (A)
VGS=6V

VGS=5V
25 C
0
1 10


100 C



-1
0.1 10
0.1 1 10 100 2 4 6 8 10

Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)




Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS




1.2 6
VGS = 0V
On - Resistance RDS(ON) ()




IDS = 250
5
1.1
4 VGS=6V

VGS=10V
1.0 3

2
0.9
1

0.8 0
-100 -50 0 50 100 150 0 1 2 3 4

Junction Temperature Tj ( C ) Drain Current ID (A)




Fig5. IS - VSD Fig6. RDS(ON) - Tj
1
10 3.0
VGS =10V
Reverse Drain Current IS (A)




IDS = 1.35A
2.5
Normalized On Resistance




2.0
100 C
25 C
0
10 1.5

1.0

0.5

-1
10 0.0
0.4 0.6 0.8 1.0 1.2 1.4 -100 -50 0 50 100 150

Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)




2012. 8. 10 Revision No : 0 3/6
KF3N80D/I


Fig 7. C - VDS Fig8. Qg- VGS

1000 12
ID=3A




Gate - Source Voltage VGS (V)
Ciss 10
Capacitance (pF)




100 8
VDS = 480V
Coss 6

10 4
Crss
2


1 0
0 10 20 30 40 0 2 4 6 8 10 12 14

Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)



Fig9. Safe Operation Area Fig10. ID- Tj

10 3
10