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2N4003K
N-Channel Enhancement 3 DRAIN

Mode Power MOSFET DRAIN CURRENT
1 0.5 AMPERES
P b Lead(Pb)-Free GATE *
DRAIN SOUCE VOLTAGE
* Gate
Pretection 30 VOLTAGE
Features: Diode
* Low Gate Voltage Threshold Vgs(th) SOURCE 2

to Facilitate Drive Circuit Design.
* Low Gate Charge for Fast Switching.
* ESD Protected Gate. 3
* Minimum Breakdown Voltage Rating of 30V. 1
2
Application:
* Level Shifters SOT-23
* Level Switches
* Low Side Load Switches
* Portable Applications

Maximum Ratings(TA=25 Unless Otherwise Specified)
Rating Symbol Value Unit
Drain-Source Voltage V DS 30
V
Gate-Source Voltage VG S