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CEM6056
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY



FEATURES

60V, 15A, RDS(ON) = 7.5 m @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead free product is acquired.
D D D D
Surface mount Package. 8 7 6 5




SO-8
1 2 3 4
1 S S S G




ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS