AO4932 - Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor.pdf part of , text manual preview

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AO4932
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET TM

General Description Features
The AO4932 uses advanced trench technology to FET1 FET2
provide excellent R DS(ON) and low gate charge. The two VDS (V) = 30V V DS(V) = 30V
MOSFETs make a compact and efficient switch and ID = 9A I D=9A (V GS = 10V)
synchronous rectifier combination for use in DC-DC RDS(ON) < 15.8m <15.8m (VGS = 10V)
converters. A monolithically integrated Schottky diode in RDS(ON) < 19.6m <23m (V GS = 4.5V)
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4932 is Pb-free
(meets ROHS & Sony 259 specifications).
UIS TESTED!
Rg,Ciss,Coss,Crss Tested

SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode

Absolute Maximum Ratings TA=25