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STS14N3LLH5
N-channel 30 V, 0.005 , 14 A, SO-8
STripFETTM V Power MOSFET
Features
Type VDSS RDS(on) ID
STS14N3LLH5 30 V <0.006 14 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
SO-8
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Figure 1. Internal schematic diagram
Description
This product utilizes the 5th generation of design
rules of ST's proprietary STripFETTM technology.
The lowest available RDS(on)*Qg, in SO-8
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1. Device summary
Order code Marking Package Packaging
STS14N3LLH5 14D3L SO-8 Tape and reel
November 2009 Doc ID 14166 Rev 4 1/12
www.st.com 12
Contents STS14N3LLH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 14166 Rev 4
STS14N3LLH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage