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STP80N03L-06
N - CHANNEL ENHANCEMENT MODE
"ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
TENTATIVE DATA
TYPE V DSS R DS(on) ID
STP80N03L-06 30 V < 0.006 80 A (*)
s TYPICAL RDS(on) = 0.005
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE 3
s HIGH dV/dt RUGGEDNESS 2
1
s APPLICATION ORIENTED
CHARACTERIZATION
TO-220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s POWER MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 30 V
VDGR Drain- gate Voltage (R GS = 20 k) 30 V
V GS Gate-source Voltage