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STP4NC80Z - STP4NC80ZFP
STB4NC80Z - STB4NC80Z-1
N-CHANNEL 800V - 2.4 - 4A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESHTMIII MOSFET
TYPE VDSS RDS(on) ID
STP4NC80Z/FP 800V < 2.8 4A
STB4NC80Z/-1 800V < 2.8 4A 3
1
s TYPICAL RDS(on) = 2.4 2
D PAK 3
2
s EXTREMELY HIGH dv/dt AND CAPABILITY 1
GATE-TO- SOURCE ZENER DIODES TO-220 TO-220FP
s 100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
s)
s
s GATE CHARGE MINIMIZED
t(
23
I2PAK 1
uc
(Tabless TO-220)
DESCRIPTION
d
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrat- P ro
ing back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capa-
le te
so
bility with higher ruggedness performance as re-
quested by a large variety of single-switch
Ob
applications.
-
(s)
APPLICATIONS
ct
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
o du
e Pr
o let
ORDERING INFORMATION
O bs SALES TYPE
STP4NC80Z
MARKING
P4NC80Z
PACKAGE
TO-220
PACKAGING
TUBE
STP4NC80ZFP P4NC80ZFP TO-220FP TUBE
STB4NC80ZT4 B4NC80Z D2PAK TAPE & REEL
STB4NC80Z-1 B4NC80Z I2PAK TAPE & REEL
November 2003 1/14
STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP(B)4NC80Z(-1) STP4NC80ZFP
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 k) 800 V
VGS Gate- source Voltage