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FMMT591
SOT-23 Transistor(PNP)


1. BASE
SOT-23
2. EMITTER
3. COLLECTOR




Features
Low equivalent on-resistance



Marking :591

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -80 V Dimensions in inches and (millimeters)

VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1 A
PC Collector Power Dissipation 500 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -80 V

Collector-emitter breakdown voltage V(BR)CEO1 IC=-10mA, IB=0 -60 V

Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V

Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 A

Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 A

hFE(1) VCE=-5V, IC=-1mA 100
hFE(2) 1 VCE=-5V, IC=-500mA 100 300
DC current gain
hFE(3) 1 VCE=-5V, IC=-1A 80
hFE(4) 1 VCE=-5V, IC=-2A 15
1
VCE(sat)1 IC=-500mA, IB=-50mA -0.3 V
Collector-emitter saturation voltage
VCE(sat)2 1 IC=-1A, IB=-100mA -0.6 V

Base-emitter saturation voltage VBE(sat) 1 IC=-1A, IB=-100mA -1.2 V

Base-emitter voltage VBE1 VCE=-5V, IC=-1A -1 V

Transition frequency fT VCE=-10V,IC=-50mA,,f=100MHz 150 MHz

Collector output capacitance Cob VCB=-10V,f=1MHz 10 pF
1
Measured under pulsed conditions, Pulse width=300s, Duty cycle2%.
FMMT591
SOT-23 Transistor(PNP)



Typical Characteristics