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STL35N15F3
N-channel 150 V, 0.04 7 A, PowerFLATTM (5x6)
,
STripFETTM III Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STL35N15F3 150 V < 0.0355 7 A (1)
1. The value is rated according Rthj-pcb
Improved die-to-footprint ratio
Very low profile package (1mm max) PowerFLATTM(5x6)
Very low thermal resistance
Low on-resistance
Application
Switching application
Figure 1. Internal schematic diagram
Description
This product is an N-channel enhancement mode
Power MOSFET built with STripFETTM III
technology, which is especially tailored to
minimize on-resistance and gate charge,
providing superior switching performance.
Table 1. Device summary
Order code Marking Package Packaging
STL35N15F3 L35N15F3 PowerFLATTM (5x6) Tape and reel
March 2011 Doc ID 018598 Rev 1 1/11
www.st.com 11
Contents STL35N15F3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics ................................... 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11 Doc ID 018598 Rev 1
STL35N15F3 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 150 V
VGS Gate-source voltage