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SEMICONDUCTOR KTJ6164S
P CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
L B L
FEATURES DIM MILLIMETERS
A _
2.93 + 0.20
2.5 Gate Drive. B 1.30+0.20/-0.15
Low Threshold Voltage : Vth=-0.5 -1.5V. C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
A
G
High Speed. E 2.40+0.30/-0.20
H
1 G 1.90
Small Package. H 0.95
J 0.13+0.10/-0.05
Enhancement-Mode.
K 0.00 ~ 0.10
Q
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10
N
C
P 7
MAXIMUM RATING (Ta=25 )
J
Q 0.1 MAX
K
M
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDS -60 V
1. SOURCE
Gate-Source Voltage VGSS 20 V
2. GATE
DC ID -200 3. DRAIN
DC Drain Current mA
Pulse IDP -800
Drain Power Dissipation PD 200 mW
Channel Temperature Tch 150 SOT-23
Storage Temperature Range Tstg -55 150
D
EQUIVALENT CIRCUIT
Marking
Lot No.
G
Type Name
EL
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS= 16V, VDS=0V - - 1 A
Drain-Source Breakdown Voltage V(BR)DSS ID=-100 A, VGS=0V -60 - - V
Drain Cut-off Current IDSS VDS=-60V, VGS=0V - - -1 A
Gate Threshold Voltage Vth VDS=-10V, ID=-1mA -0.5 - -1.5 V
Forward Transfer Admittance |Yfs| VDS=-10V, ID=-50mA 100 - - mS
Drain-Source ON Resistance RDS(ON) ID=-50mA, VGS=-2.5V - 1.5 2
Input Capacitance Ciss VDS=-10V, VGS=0V, f=1MHz - 55 65 pF
Reverse Transfer Capacitance Crss VDS=-10V, VGS=0V, f=1MHz - 13 18 pF
Output Capacitance Coss VDS=-10V, VGS=0V, f=1MHz - 40 50 pF
Turn-on Time tr - 8 -
Turn-on Time ton - 14 -
Switching Time nS
Turn-on Time tf - 35 -
Turn-on Time toff - 75 -
2003. 9. 19 Revision No : 1 1/3
KTJ6164S
2003. 9. 19 Revision No : 1 2/3
KTJ6164S
2003. 9. 19 Revision No : 1 3/3