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SEMICONDUCTOR KTD1414
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
A C
APPLICATIONS.
DIM MILLIMETERS
F
S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
FEATURES E
C _
2.70 + 0.3
B
High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=1A. D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
K
R _
K 3.7 + 0.2
MAXIMUM RATING (Ta=25 ) M
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
J
CHARACTERISTIC SYMBOL RATING UNIT D D N _
2.54 + 0.1
P _
6.8 + 0.1
Collector-Base Voltage VCBO 100 V Q _
4.5 + 0.2
R _
2.6 + 0.2
N N
Collector-Emitter Voltage VCEO 80 V H S 0.5 Typ
Emitter-Base Voltage VEBO 5 V
Collector Current IC 4 A 1. BASE
Q
1 2 3
2. COLLECTOR
Base Current IB 0.5 A
3. EMITTER
Collector Power Dissipation (Tc=25 ) PC 25 W
Junction Temperature Tj 150 TO-220IS
Storage Temperature Range Tstg -55 150
EQUIVALENT CIRCUIT
COLLECTOR
BASE
_
~ 4.5K _
~ 300
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=100V, IE=0 - - 20 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2.5 mA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 80 - - V
hFE(1) VCE=2V, IC=1A 2000 - -
DC Current Gain
hFE(2) VCE=2V, IC=3A 1000 - -
Collector-Emitter VCE(sat) IC=3A, IB=6mA - - 1.5
Saturation Voltage V
Base-Emitter VBE(sat) IC=3A, IB=6mA - - 2.0
Turn-on Time ton OUTPUT - 0.2 -
20