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2SD288 NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
*
TO-220
ABSOLUTE MAXIMUM RATINGS (TA=25oC)
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 55 V
Emitter-Base voltage VEBO 5 V
Collector Current (DC) IC 3 A
Collector Dissipation (Tc=25oC) PC 20 W
Junction Temperature Tj 150 C
o
o
Storage Temperature Tstg -50~150 C
ELECTRICAL CHARACTERISTICS (TA=25oC)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current ICBO VCB= 50V , IE=0 50