Text preview for : nds335n.pdf part of
| Home
July 1996
NDS335N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
These N -Channel logic level enhancement mode power field 1.7 A, 20 V. RDS(ON) = 0.14 @ VGS= 2.7 V
effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.11 @ VGS= 4.5 V.
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance. Industry standard outline SOT-23 surface mount package
These devices are particularly suited for low voltage using poprietary SuperSOTTM-3 design for superior thermal
applications in notebook computers, portable phones, PCMCIA and electrical capabilities.
cards, and other battery powered circuits where fast switching,
and low in-line power loss are needed in a very small outline High density cell design for extremely low RDS(ON).
surface mount package.
Exceptional on-resistance and maximum DC current
capability.
________________________________________________________________________________
D
G S
Absolute Maximum Ratings T A = 25