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2SD2097(NPN)
TO-92 Bipolar Transistors
1. EMITTER
TO-92
2. COLLECTOR 4.45
5.21
3. BASE
1.25MAX
4.32
Features
2.92 5.33
MIN
MIN
6.35 MIN
Seating Plane
Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A)
12.7
0.48
0.41
Excellent Dc current gain characteristics
3.43
0.53
0.41
MIN
2.41
2.67
MAXIMUM RATINGS (TA=25 unless otherwise noted)
3.18
4.19 2.03
Symbol Parameter Value Units 2.67
1.14
VCBO Collector-Base Voltage 50 V 2.03
1.40
2.67
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 6 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous 5 A
PC Collector Power Dissipation 0.625 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 6 V
Collector cut-off current ICBO VCB=40V,IE=0 0.5 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.5 A
DC current gain hFE VCE=2V,IC=0.5A 120 390
Collector-emitter saturation voltage VCE(sat) IC=4A,IB=100mA 1 V
Transition frequency fT VCE=6V,IC=50mA,f=100MHz 150 MHz
Collector output capacitance Cob VCB=20V,IE=0,f=1MHz 30 pF
CLASSIFICATION OF hFE
Rank Q R
Range 120-270 180-390
2SD2097(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
2SD2097(NPN)
TO-92 Bipolar Transistors